Type Designator: BLW96
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 340 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: –
Package: M174
