Type Designator: PTB20053
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 145 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 860 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: –
Package: M169
