Type Designator: 2N1131
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: –
Package: TO5
